symbol v ds v gs i dm i ar e ar t j ,t stg symbol typ max 17 25 40 50 r q jc 3.6 4.5 t a =70c 1.6 powerdissipation a t a =25c p dsm 2.5 25 a mj w junctionandstoragetemperaturerange a p d c 33.3 16.7 55to175 t c =100c avalanchecurrent c 13 i d 25 20 75 pulseddraincurrent c powerdissipation b t c =25c continuousdrain current t c =25c g t c =100c repetitiveavalancheenergyl=0.3mh c absolute maximum ratings t a =25c unless otherwise noted v v 16 gatesourcevoltage drainsourcevoltage 20 maximum units parameter t10s r q ja c/w maximumjunctiontoambient a steadystate c/w w maximumjunctiontocase b steadystate c/w thermal characteristics parameter units maximumjunctiontoambient a AOD476 v ds (v)=20v i d =25a(v gs =10v) r ds(on) <21m w (v gs =10v) r ds(on) <28m w (v gs =4.5v) r ds(on) <79m w (v gs =2.5v) theAOD476usesadvancedtrenchtechnologyand designtoprovideexcellentr ds(on) withlowgate charge.thisdeviceissuitableforuseinpwm,load switchingandgeneralpurposeapplications. g d s www.freescale.net.cn 1/6 n-channel enhancement mode field general description effect transistor features
symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 100 na v gs(th) 0.6 1.26 2 v i d(on) 75 a 14 21 t j =125c 21 20 28 57 79 g fs 19 s v sd 0.77 1 v i s 30 a c iss 900 pf c oss 162 pf c rss 105 pf r g 0.9 1.35 w q g (10v) 15 18 nc q g (4.5v) 7.2 9 nc q gs 1.8 nc q gd 2.8 nc t d(on) 4.5 ns t r 9.2 ns t d(off) 18.7 ns t f 3.3 ns t rr 18 ns q rr 9.5 nc 0 r ds(on) staticdrainsourceonresistance bodydiodereverserecoverytime drainsourcebreakdownvoltage onstatedraincurrent gateresistance i d =250ua,v gs =0v v gs =10v,v ds =5v v gs =10v,i d =20a reversetransfercapacitance v ds =v gs , i d =250 m a v ds =16v,v gs =0v v ds =0v,v gs =16v zerogatevoltagedraincurrent gatebodyleakagecurrent i f =20a,di/dt=100a/ m s v gs =0v,v ds =10v,f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss ua gatethresholdvoltage m w forwardtransconductance diodeforwardvoltage i s =1a,v gs =0v v ds =5v,i d =20a v gs =2.5v,i d =4a v gs =4.5v,i d =10a v gs =0v,v ds =0v,f=1mhz turnofffalltime totalgatecharge v gs =10v,v ds =10v,i d =20a gatesourcecharge gatedraincharge totalgatecharge bodydiodereverserecoverycharge i f =20a,di/dt=100a/ m s maximumbodydiodecontinuouscurrent g inputcapacitance outputcapacitance turnondelaytime dynamic parameters turnonrisetime turnoffdelaytime v gs =10v,v ds =10v,r l =0.5 w , r gen =3 w a:thevalueofr q ja ismeasuredwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwith t a =25c.thepowerdissipationp dsm isbasedonr q ja andthemaximumallowedjunctiontemperatureof150c.thevalueinanygiven applicationdependsontheuser'sspecificboarddesign,andthemaximumtemperatureof175cmaybeusedifthepcballowsit. b.thepowerdissipationp d isbasedont j(max) =175c,usingjunctiontocasethermalresistance,andismoreusefulinsettingtheupper dissipationlimitforcaseswhereadditionalheatsinkingisused. c:repetitiverating,pulsewidthlimitedbyjunctiontemperaturet j(max) =175c. d.ther q ja isthesumofthethermalimpedencefromjunctiontocaser q jc andcasetoambient. e.thestaticcharacteristicsinfigures1to6areobtainedusing<300 m spulses,dutycycle0.5%max. f.thesecurvesarebasedonthejunctiontocasethermalimpedencewhichismeasuredwiththedevicemountedtoalargeheatsink,assuming amaximumjunctiontemperatureoft j(max) =175c. g.themaximumcurrentratingislimitedbybondwires. h.thesetestsareperformedwiththedevicemountedon1in2fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.thesoa curveprovidesasinglepulserating. *thisdeviceisguaranteedgreenafterdatacode8x11(sep1 st 2008). rev2:oct.2008 www.freescale.net.cn 2/6 AOD476 n-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 1.4 494 593 692 830 193 18 59 142 0 5 10 15 20 25 30 1 2 3 4 5 v gs (volts) figure 2: transfer characteristics i d (a) 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 40c 0.60 0.80 1.00 1.20 1.40 1.60 50 25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v,20a v gs =4.5v,10a v gs =2.5v,4a 10 15 20 25 30 35 3 4 5 6 7 8 9 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 4.5v 10v 8v 6v 3.5v v gs =4.5v 40c v gs =2.5v www.freescale.net.cn 3/6 AOD476 n-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 1.4 494 593 692 830 193 18 59 142 0 2 4 6 8 10 0 3 6 9 12 15 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z q q q q jc normalized transient thermal resistance c oss c rss v ds =12.5v i d =20a singlepulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =4.5c/w t on t p d indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse t j(max) =175c t c =25c 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 100 m s 1ms dc r ds(on) limited t j(max) =175c,t c =25c www.freescale.net.cn 4/6 AOD476 n-channel enhancement mode field effect transistor
typical electrical and thermal characteristics 1.4 494 593 692 830 193 18 59 142 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z q q q q ja normalized transient thermal resistance singlepulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =50c/w t on t p d indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse 10 15 20 25 30 35 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) t a =25c 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c dd d a v bv i l t - = www.freescale.net.cn 5/6 AOD476 n-channel enhancement mode field effect transistor
+ vdc ig vds dut + vdc vgs vgs 10v qg qgs qgd charge gatechargetestcircuit&waveform ig vgs + vdc dut l vgs vds isd isd dioderecoverytestcircuit&waveforms vds vds+ i f di/dt i rm rr vdd vdd q=idt t rr + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistiveswitchingtestcircuit&waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut + vdc l vgs vds id vgs bv i unclampedinductiveswitching(uis)testcircuit& waveforms vds ar dss 2 e=1/2li ar ar www.freescale.net.cn 6/6 AOD476 n-channel enhancement mode field effect transistor
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